View STC4516_4845243.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONFIGURATION SOP-8 Top View FEATURE P Channel -30V/-7.2A, RDS(ON) = 22m-ohm (Typ.) @VGS =-10V -30V/-5.6A, RDS(ON) = 40m-ohm @VGS =-4.5V N Channel 30V/8.5A, RDS(ON) = 10m-ohm @VGS =10V 30V/7.8A, RDS(ON) = 16m-ohm @VGS =4.5V Super high density cell design for extremely low RDS(ON) SOP-8 package design
8 D1
7 D1
6 D2
5 D2
STC5416 YA
1 S1
2 G1
3 S2
4 G2 N-Channel MOSFET P-Channel MOSFET
Y: Year Code
A: Process Code
ORDERING INFORMATION Part Number STC4516S8RG STC4516S8TG Package SOP-8 SOP-8 Part Marking STC4516 STC4516
Process Code : A ~ Z ; a ~ z STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb - Free STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb - Free
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ABSOULTE MAXIMUM RATINGS (Ta = 25 unless otherwise noted ) P-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical -30 +/-20 -7.2 -5.6 -20 -2.3 2.8 1.8 -55/150 -55/150 80 Unit V V A A A W /W
N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=100 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 +/-20 8.5 7.5 20 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W /W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) P-Channel Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss Td(on) tr Td(off) tf VDS=-15V,VGS=-10V ID=-7.2A 16 23 4.5 1650 350 235 16 17 65 35 30 30 110 80 pF nC V(BR)DSS VGS(th) IGSS IDSS VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=+20V VDS=-30V,VGS=0V VDS=-30V,VGS=0V TJ=55 VDS-5V,VGS=-10V VGS=-10V,ID=-7.2A VGS=-4.5V,ID=-5.6A VDS=-10V,ID=-7.2A IS=-2.3A,VGS=0V -30 -1.0 -3.0 +100 -1 -5 -40 0.022 0.030 24 -0.8 -1.2 V V nA uA A S V Symbol Condition Min Typ Max Unit
ID(on) RDS(on) gfs VSD
VDS=-15V,VGS=0V f=1MHz VDD=-15V,RL=15 ID=-1A,VGEN=-10V RG=6
nS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) -N-Channel Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss Td(on) tr Td(off) tf VDS=15V,VGS=10V ID=2A 16 4.2 2.5 1350 258 150 15 6 20 12 20 16 40 20 pF 24 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=+20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=55 VDS5V,VGS=10V VGS=10V,ID=8.5A VGS=4.5V,ID=7.8A VDS=15V,ID=6.2A IS=-2.3A,VGS=0V 25 0.010 0.013 13 0.8 1.2 30 1.0 3.0 +100 1 5 V V nA uA A S V
Symbol
Condition
Min
Typ
Max Unit
VDS=15V,VGS=0V f=1MHz VDD=15V,RL=15 ID=5.0A,VGEN=10V RG=1
nS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (N MOS)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (N MOS)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (P MOS)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (P MOS)
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1

▲Up To Search▲

Price & Availability of STC4516

	To Download STC4516 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .